V15PN50-M3 Datasheet - Vishay

V15PN50-M3 Trench MOS Barrier Schottky Rectifier

V15PN50-M3 Features

* Very low profile - typical height of 1.1 mm

* Ideal for automated placement

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Datasheet Details

V15PN50-M3

101.73 KB

Trench mos barrier schottky rectifier.

📁 Related Datasheet

V15P10 Trench MOS Barrier Schottky Rectifier (Vishay)

V15P12 Trench MOS Barrier Schottky Rectifier (Vishay)

V15P15 Trench MOS Barrier Schottky Rectifier (Vishay)

V15P45 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier (Vishay)

V15P45-M3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier (Vishay)

V15P45HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier (Vishay)

V15P45S SMD Photovoltaic Solar Cell Protection Schottky Rectifiers (Vishay)

V15P45S-M3 SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers (Vishay)

TAGS

V15PN50-M3 Distributor