* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V20DL45BP Datasheet (109.41 KB)
V20DL45BP
109.41 KB
Trench mos barrier schottky rectifier.
www.vishay.com V20DL45BP Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF.
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