* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V20DL45HM3 Datasheet (123.16 KB)
V20DL45HM3
123.16 KB
Low-voltage trench mos barrier schottky rectifier.
www.vishay.com V20DL45-M3, V20DL45HM3 Vishay General Semiconductor Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5.
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