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V30DM100C Datasheet - Vishay

V30DM100C Trench MOS Barrier Schottky Rectifier

V30DM100C Features

* Trench MOS Schottky technology Available

* Very low profile - typical height of 1.7 mm

* Ideal for automated placement

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak

V30DM100C Datasheet (105.08 KB)

Preview of V30DM100C PDF
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Datasheet Details

Part number:

V30DM100C

Manufacturer:

Vishay ↗

File Size:

105.08 KB

Description:

Trench mos barrier schottky rectifier.

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TAGS

V30DM100C Trench MOS Barrier Schottky Rectifier Vishay

V30DM100C Distributor