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V30DM100C - Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number	V30DM100C
Manufacturer	Vishay ↗
File Size	105.08 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V30DM100C-Vishay.pdf

V30DM100C Product details

Features

Trench MOS Schottky technology Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 DESI.

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Published: Jun 8, 2020 |