V30D100C Datasheet - Vishay

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V30D100C Trench MOS Barrier Schottky Rectifier

www.vishay.com V30D100C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.46 V at IF = 5.

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Datasheet Details

Part number:

V30D100C

Manufacturer:

Vishay ↗

File Size:

109.12 KB

Description:

Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - hal

V30D100C Distributors

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V30D100C Trench MOS Barrier Schottky Rectifier Vishay

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