V30D45C Datasheet - Vishay

datasheet Preview Page 1 from Datasheet4u.com

V30D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V30D45C Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.30 V at IF = 5.0.

V30D45C-Vishay.pdf

V30D45C Datasheet Preview — Preview of V30D45C PDF

Datasheet Details

Part number:

V30D45C

Manufacturer:

Vishay ↗

File Size:

119.26 KB

Description:

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 45 V IFSM VF at IF = 15 A TJ max. 200 A 0.40 V 150 °C Package SMPD (TO-263AC) Circuit configuration Common

V30D45C Distributors

📁 Related Datasheet

V300A12xxxx V300B12xxxx V300C12xxxx V300LA10 V300LA10CP V300LA10P

📌 All Tags

V30D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay V30D45C-like datasheet