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V30D45C Datasheet - Vishay

V30D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

V30D45C Features

* Trench MOS Schottky technology Available

* Very low profile - typical height of 1.7 mm

* Ideal for automated placement

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak

V30D45C-Vishay.pdf

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Datasheet Details

Part number:

V30D45C

Manufacturer:

Vishay ↗

File Size:

119.26 KB

Description:

Dual low-voltage trench mos barrier schottky rectifier.

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V30D45C V30D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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