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V30D60C Trench MOS Barrier Schottky Rectifier

V30D60C Description

www.vishay.com V30D60C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A eSMP® Seri.

V30D60C Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

V30D60C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 15 A 60 V 170 A VF at IF = 15 A 0.57 V TJ max. 150 °C Package SMPD (TO-263AC) Circuit configuration Common

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Datasheet Details

Part number
V30D60C
Manufacturer
Vishay ↗
File Size
119.60 KB
Datasheet
V30D60C-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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