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V30D60C

Trench MOS Barrier Schottky Rectifier

V30D60C Features

* Trench MOS Schottky technology Available

* Very low profile - typical height of 1.7 mm

* Ideal for automated placement

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak

V30D60C Datasheet (119.60 KB)

Preview of V30D60C PDF

Datasheet Details

Part number:

V30D60C

Manufacturer:

Vishay ↗

File Size:

119.60 KB

Description:

Trench mos barrier schottky rectifier.
www.vishay.com V30D60C Vishay General Semiconductor Dual TMBSĀ® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A eSMPĀ® Seri.

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V30D60C Trench MOS Barrier Schottky Rectifier Vishay

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