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V30D202C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number	V30D202C
Manufacturer	Vishay ↗
File Size	117.45 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V30D202C-Vishay.pdf

V30D202C Product details

Features

Trench MOS Schottky technology generation 2 Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TY.

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Published: Aug 22, 2017 |