* Very low profile - typical height of 1.7 mm Available
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified available
* Material categorizati
V30D170C Datasheet (104.72 KB)
V30D170C
104.72 KB
Trench mos barrier schottky rectifier.
www.vishay.com
V30D170C
Vishay General Semiconductor
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
eSMP® Series
K
1
2 Top View
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