* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak
V30D60CL Datasheet (120.49 KB)
V30D60CL
120.49 KB
Dual trench mos barrier schottky rectifier.
www.vishay.com
V30D60CL
Vishay General Semiconductor
Dual TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.34 V at IF = 5 A
eSMP® Ser.
📁 Related Datasheet
V30D60C Trench MOS Barrier Schottky Rectifier (Vishay)
V30D100C Trench MOS Barrier Schottky Rectifier (Vishay)
V30D170C Trench MOS Barrier Schottky Rectifier (Vishay)
V30D202C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30DL45 Trench MOS Barrier Schottky Rectifier (Vishay)
V30DL45BP Trench MOS Barrier Schottky Rectifier (Vishay)
V30DL50C Trench MOS Barrier Schottky Rectifier (Vishay)
V30DL50C-M3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
V30DL50CHM3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
