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V40M150CHM3, V40M150C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40M150CHM3 Description

www.vishay.com V40M150C-M3, V40M150CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V a.

V40M150CHM3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: for definitions of compliance please see www. visha

V40M150CHM3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A (TA = 125 °C) TJ max. Package 2 x 20 A 150 V 160 A 0.75 V 175 °C TO-220AB Diode variations Dual commo

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: V40M150CHM3, V40M150C-M3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
V40M150CHM3, V40M150C-M3
Manufacturer
Vishay ↗
File Size
123.55 KB
Datasheet
V40M150C-M3-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Note
This datasheet PDF includes multiple part numbers: V40M150CHM3, V40M150C-M3.
Please refer to the document for exact specifications by model.

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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