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V8PM10 Trench MOS Barrier Schottky Rectifier

V8PM10 Description

www.vishay.com V8PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.

V8PM10 Features

* Very low profile - typical height of 1.1 mm Available
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified

V8PM10 Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-fr

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Datasheet Details

Part number
V8PM10
Manufacturer
Vishay ↗
File Size
105.95 KB
Datasheet
V8PM10-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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