V8PM10S - Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V8PM10S
Manufacturer	Vishay
File Size	101.29 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V8PM10S-Vishay.pdf

Very low profile - typical height of 1.1 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

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Published: Jun 8, 2020 |