VF60100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

VF60100C Description

www.vishay.com VF60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS.

VF60100C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPICAL APPLI

VF60100C Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM VF at IF = 30 A TJ max. 320 A 0.66 V 150 °C Package ITO-220AB Diode variation Dual co

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Datasheet Details

Part number: VF60100C
Manufacturer: Vishay ↗
File Size: 87.81 KB
Datasheet: VF60100C-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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