VF60120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VF60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A TMBS.

📥 Download Datasheet

VF60120C Datasheet Preview — Preview of VF60120C PDF

Datasheet Specifications

Part number: VF60120C
Manufacturer: Vishay ↗
File Size: 81.23 KB
Datasheet: VF60120C-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. v

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 120 V 300 A 0.71 V 150 °C ITO-220AB Diode variation Dual Common C

VF60120C Distributors

📁 Related Datasheet

📌 All Tags

VF60120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay VF60120C-like datasheet

VF60100C