Datasheet4U Logo Datasheet4U.com

VIT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier

VIT2060G Description

www.vishay.com VT2060G, VFT2060G, VBT2060G, VIT2060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .

VIT2060G Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VIT2060G Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT2060G PIN 1 K PIN 2 HEATSINK VIT2060G 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Pac

📥 Download Datasheet

Preview of VIT2060G PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VIT2060G
Manufacturer
Vishay ↗
File Size
151.64 KB
Datasheet
VIT2060G-Vishay.pdf
Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

📌 All Tags

Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VIT2060G-like datasheet