Datasheet Details
- Part number
- VS-GT100TP120N
- Manufacturer
- Vishay ↗
- File Size
- 183.81 KB
- Datasheet
- VS-GT100TP120N-Vishay.pdf
- Description
- Half Bridge IGBT
VS-GT100TP120N Description
www.vishay.com VS-GT100TP120N Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C V.
Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.
VS-GT100TP120N Features
* Low VCE(sat) trench IGBT technology
* 10 μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175 °C
* Low inductance case
* Fast and soft reverse recovery antiparallel FWD
* Isolated cop
VS-GT100TP120N Applications
* UPS (Uninterruptable Power Supply)
* Inverter for motor drive
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