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VS-GT180DA120U IGBT

VS-GT180DA120U Description

www.vishay.com VS-GT180DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES I.

VS-GT180DA120U Features

* 1200 V trench and field stop technology
* Low switching losses
* Positive temperature coefficient
* Easy paralleling
* Square RBSOA
* 10 μs short circuit capability
* HEXFRED® antiparallel diodes with ultrasoft reverse recovery
* TJ m

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