Part number:
VS-GT200TP065N
Manufacturer:
File Size:
143.09 KB
Description:
Half bridge - trench igbt
VS-GT200TP065N Datasheet (143.09 KB)
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Vishay Semiconductors | VS-GT200TP065N | IGBT MOD 650V 221A INT-A-PAK | DigiKey | 0 | 0 |
$0
|
🛒 Buy Now |
VS-GT200TP065N Datasheet (143.09 KB)
VS-GT200TP065N
143.09 KB
Half bridge - trench igbt
* Trench IGBT
* Very low VCE(on)
* 5 μs short circuit capability
* Positive VCE(on) temperature coefficient
* FRED Pt® anti-parallel diode low Qrr and low switching energy
* Industry and standard package
* TJ = 175 °C
* UL pending
📁 Related Datasheet
VS-GT250SA60S - Insulated Gate Bipolar Transistor
(Vishay)
.vishay.
VS-GT250SA60S
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
SOT-227
PRIMARY CHARACTERISTICS
VCES.
VS-GT100LA120UX - IGBT
(Vishay)
.vishay.
VS-GT100LA120UX
Vishay Semiconductors
“Low Side Chopper” IGBT SOT-227 (Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES IC DC VCE(o.
VS-GT100NA120UX - IGBT
(Vishay)
.vishay.
VS-GT100NA120UX
Vishay Semiconductors
“High Side Chopper” IGBT SOT-227 (Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES IC DC VCE(.
VS-GT100TP120N - Half Bridge IGBT
(Vishay)
.vishay.
VS-GT100TP120N
Vishay Semiconductors
Half Bridge IGBT Power Module, 1200 V, 100 A
INT-A-PAK
PRODUCT SUMMARY
VCES IC at TC = 80 °C V.
VS-GT100TP60N - Half Bridge IGBT
(Vishay)
.vishay.
VS-GT100TP60N
Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 100 A
INT-A-PAK
PRIMARY CHARACTERISTICS
VCES
IC at TC = .
VS-GT120DA65U - IGBT
(Vishay)
.vishay.
VS-GT120DA65U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A
SOT-227
PRIMARY CHARACTERISTICS
.
