VS-GT400TH60N Datasheet - Vishay

IGBT

VS-GT400TH60N Features

* Low VCE(on) trench IGBT technology

* Low switching losses

* 5 μs short circuit capability

* VCE(on) with positive temperature coefficient

* Maximum junction temperature 175 °C

* Low inductance case

* Fast and soft reverse recovery antiparalle

VS-GT400TH60N General Description

Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter volt.

VS-GT400TH60N Datasheet (157.73 KB)