* Trench IGBT technology
* Higher switching frequency up to 150 kHz
* Square RBSOA
* Low VCE(on)
* FRED Pt® Gen 4 clamping diode
* Fully isolated package
* Very low internal inductance (≤ 5 nH typical)
* Industry standard outline
VS-GT50LA65UF Datasheet (209.08 KB)
VS-GT50LA65UF
209.08 KB
Igbt.
www.vishay.com VS-GT50LA65UF Vishay Semiconductors “Low Side Chopper” IGBT SOT-227, 650 V, 50 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on.
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