This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse ba
www.vishay.com VS-MBRB25..CT-M3, VS-MBR25..CT-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-MBRB25..CT-M3 2 1 Common 3 Anode cathode Anode VS-MBR25..CT-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max.
TJ max.
EAS Package 2 x 15 A 35 V, 45 V See datasheet 40 mA at 125 °C 150 °C 16 mJ D2PAK (TO-263AB), TO-262AA Circuit configuration
VS-MBR2535CT-1-M3 Features
* 150 °C TJ operation
* Center tap D2PAK (TO-263AB) and TO-262AA packages
* Low forward voltage drop
* High frequency operation
* High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
* Guard ring fo
Datasheet Details
VS-MBR2535CT-1-M3, VS-MBRB2535CT-M3
216.96 KB
High performance schottky rectifier.
This datasheet PDF includes multiple part numbers: VS-MBR2535CT-1-M3, VS-MBRB2535CT-M3.
Please refer to the document for exact specifications by model.
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