Datasheet4U Logo Datasheet4U.com

VT2045CBP Trench MOS Barrier Schottky Rectifier

VT2045CBP Description

www.vishay.com VT2045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 .

VT2045CBP Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106

VT2045CBP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max. (DC forward current) Package 2 x 10 A 45 V 160 A 0.41 V 150 °C 200 °C TO-220AB Diode variation

📥 Download Datasheet

Preview of VT2045CBP PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VT2045CBP
Manufacturer
Vishay ↗
File Size
121.28 KB
Datasheet
VT2045CBP-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

  • VT200 - Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
  • VT2021 - High Definition Audio Codec (VIA)

📌 All Tags

Trench MOS Barrier Schottky Rectifier Vishay
Vishay VT2045CBP-like datasheet