VT2045CBP Datasheet - Vishay

VT2045CBP - Trench MOS Barrier Schottky Rectifier

VT2045CBP Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* TJ 200 °C max. in solar bypass mode application

* Material categorization: For definitions of co

Datasheet Details

VT2045CBP

121.28 KB

Trench mos barrier schottky rectifier.

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