Datasheet4U Logo Datasheet4U.com

VT2060C-E3 Datasheet - Vishay

VT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VT2060C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VT2060C-E3 Datasheet (153.74 KB)

Preview of VT2060C-E3 PDF
VT2060C-E3 Datasheet Preview Page 2 VT2060C-E3 Datasheet Preview Page 3

Datasheet Details

Part number:

VT2060C-E3

Manufacturer:

Vishay ↗

File Size:

153.74 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

VT2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT2060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VT200 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)

VT2021 High Definition Audio Codec (VIA)

VT2045BP Trench MOS Barrier Schottky Rectifier (Vishay)

VT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

VT2060C-E3 Distributor