* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT2060G PIN 1 PIN 3 PIN 2 CASE 3 1 VIT2060G PIN 1 PIN 3 2 3 1
VT2060G
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Dual high-voltage trench mos barrier schottky rectifier.
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New Product
VT2060G, VIT2060G
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF.
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