BC847S - Dual General Purpose Transistor
Dual General Purpose Transistor NPN Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Device Marking BC847S=1C Symbol VCEO VCBO VEBO IC Symbol PD TJ Tstg Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Off Characteristics Collector-Emitter Breakdown Voltag
