MBT3904DW - Dual General Purpose Transistor
Dual General Purpose Transistor NPN+NPN Silicon Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC MBT3904DW 3 21 45 6 NPN+NPN 6 54 123 SOT-363(SC-88) Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD RθJA TJ,Tstg Max 150 833 -55 to +150 Uni.