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MBT3906DW1T1G Dual General Purpose Transistor

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Description

MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin *off of our popular SOT *23/SOT *323 three

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Features

* http://onsemi. com (3) (2) (1)
* hFE, 100
* 300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7
* inch/3,000 Unit Tape and Reel These Devices are Pb

Applications

* and is housed in the SOT
* 363 six
* leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low

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📁 Related Datasheet

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📌 All Tags

MBT3906DW1T1G Dual General Purpose Transistor ON Semiconductor
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