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MBT6517LT1 Datasheet - WEJ

MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR

RoHS MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation: Pc=225mW(Ta=25 ) Collector-Emitter Voltage :Vceo=350V ABSOLUTE MAXIMUM RATINGS at Ta=25 DCharacteristic Symbol Rating Collector-Base Voltage Vcbo 350 TCollector-Emitter Voltage Vceo 350 .,LEmitter-Base Voltage Collector Current Base Current Vebo Ic Ib 6 500 250 Collector Dissipation Ta=25 PD 225 OJunction Temperature Storage Temperature Tj 150 Tstg -55-150 2.9 1 .

MBT6517LT1 Datasheet (60.74 KB)

Preview of MBT6517LT1 PDF

Datasheet Details

Part number:

MBT6517LT1

Manufacturer:

WEJ

File Size:

60.74 KB

Description:

Npn epitaxial silicon transistor.

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MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR WEJ

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