MBT6517LT1 Datasheet (WEJ) - NPN EPITAXIAL SILICON TRANSISTOR

MBT6517LT1, NPN EPITAXIAL SILICON TRANSISTOR

RoHS MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation: Pc=225mW(Ta=25 ) Collector-Emitter Voltage :Vceo=350V ABSOLUTE MAXIMUM RATINGS at Ta=25 DCharacteristic Symbol Rating Collector-Base Voltage Vcbo 350 TCollector-Emitter Voltage Vceo 350 .,LEmitter-Base Voltage Collector Current Base Current Vebo Ic Ib 6 500 250 Collector Dissipation Ta=25 PD 225 OJunction Temperature Storage Temperature Tj 150 Tstg -55-150 2.9 1