WG30N65HJ1 IGBT

WeEn

WG30N65HJ1 Description

WG30N65HJ1 IGBT Rev.01 - 04 March 2024 Product data sheet 1.General .
WG30N65HJ1 uses advanced Fine Trench Field-stop technology IGBT in TO3PF package to provide extremely low Vce(sat), and excellent switching performanc.

WG30N65HJ1 Features

* Maximum junction temperature 175 °C
* Positive Temperature efficient for easy paralleling
* High switching speed

WG30N65HJ1 Applications

* PFC
* Solar converters
* UPS
* Welding Converters
* Mid to high range switching frequency converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCE Collector-emitter voltage, Tj ≥ 25 °C IC Symbol DC collector current, limit

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Datasheet Details

Part number: WG30N65HJ1
Manufacturer: WeEn
File Size: 654.29 KB
Datasheet: WG30N65HJ1-WeEn.pdf
Description: IGBT

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