WMS30N085E Datasheet - WeEn

WMS30N085E N-Channel Silicon MOSFET

WMS30N085E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. h RoHS alogen-Free Lead-Free 2. Fea.

WMS30N085E Features

* Advance High Cell Density Trench Technology

* Low RDS(on) to Minimize Conduction Losses

* Low Capacitance to Minimize Switching Losses

* Optimized Gate Charge to Minimize Driver Losses

* 100% UIS Tested

* RoHS Compliant, Halogen Free and Lead Free 3

WMS30N085E-WeEn.pdf