WMS30N085E - N-Channel Silicon MOSFET
WMS30N085E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge.
It is designed and qualified in a wide range of industrial and consumer applications.
h RoHS alogen-Free Lead-Free 2.
Fea
WMS30N085E Features
* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Switching Losses
* Optimized Gate Charge to Minimize Driver Losses
* 100% UIS Tested
* RoHS Compliant, Halogen Free and Lead Free 3
