WMS30N030 - N-Channel Silicon MOSFET
WMS30N030 Features
* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Switching Losses
* Optimized Gate Charge to Minimize Driver Losses
* 100% UIS Tested
* RoHS Compliant and Halogen Free halogen-Free
