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WMS30N250E

N-Channel Silicon MOSFET

WMS30N250E Features

* High ESD sensitivity devices

* Advance High Cell Density Trench Technology

* Low RDS(on) to Minimize Conduction Losses

* Low Capacitance to Minimize Switching Losses

* Optimized Gate Charge to Minimize Driver Losses

* 100% UIS Tested

* RoHS C

WMS30N250E General Description

WMS30N250E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. h RoHS alogen-Free Lead-Free 2. Fea.

WMS30N250E Datasheet (655.79 KB)

Preview of WMS30N250E PDF

Datasheet Details

Part number:

WMS30N250E

Manufacturer:

WeEn

File Size:

655.79 KB

Description:

N-channel silicon mosfet.

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WMS30N250E N-Channel Silicon MOSFET WeEn

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