WNSC6D30650BT2-A Silicon Carbide Diode

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Description

WNSC6D30650BT2-A Silicon Carbide Diode Rev.01 - 22 March 2024 Product data sheet 1.General .
Silicon Carbide Schottky diode in a TO263-2L (D2PAK) plastic package, designed for high frequency switched-mode power supplies.

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Datasheet Specifications

Part number: WNSC6D30650BT2-A
Manufacturer: WeEn
File Size: 492.00 KB
Datasheet: WNSC6D30650BT2-A-WeEn.pdf
Description: Silicon Carbide Diode

Features

* New 6th Generation Technology
* Low Forward Voltage Drop
* Low Reverse Leakage Current
* High Forward Surge Capability IFSM
* Reduced losses in associated MOSFET
* Reduced EMI
* Reduced cooling requirements
* RoHS compliant

Applications

* EV On Board Chargers
* EV DC-DC converters
* Other EV HV systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF continuous forward current Tj junction temperature S

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