S8050
..
NPN General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol VCEO VCBO VEBO
Tj
Tstg
TO-92
1. EMITTER
2. BASE 3. COLLECTOR
Value 25 40 5.0 500 0.625
-55 to +150
Unit Vdc Vdc Vdc m Adc
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 m Adc, IB=0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) Collector Cutoff Current (VCE= 20 Vdc, IB =0) Collector Cutoff Current (VCB= 40 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.0Vdc, I C =0)
Symbol
Min
Max
Unit
V(BR)CEO 25
- Vdc
V(BR)CBO 40
- V(BR)EBO 5.0
- ICE0
- 0.1
Vdc Vdc u Adc
ICBO
- 0.1 u...
Representative S8050 image (package may vary by manufacturer)
