WTM1624 - NPN EPITAXIAL PLANAR TRANSISTOR
WTM1624 Features
* Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide ASO Absolute Maximum Ratings at TA = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
