W3E16M72S-XBX - 16Mx72 Registered DDR SDRAM
The 128MByte (1Gb) DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits.
Each chip is internally configured as a quad-bank DRAM.
Each of the chip’s 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits.
The 128 MB DDR SDRAM uses a
W3E16M72S-XBX Features
* Registered for enhanced performance of bus speeds of 200, 225, and 250 MHz Package:
* 219 Plastic Ball Grid Array (PBGA), 32 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#) Commands entered on each positive CK edge Internal pipelined do
