WPM2009D Datasheet - WillSEMI

WPM2009D P-MOSFET

This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging circuit of mobile phone application. .

WPM2009D Features

* z Max Rds(on) 42m @ Vgs=-4.5V z Max Vds -20V z Max Current -4.0A z Typical Vgs(th) -0.65V @ Id=-250uA z Power Dissipation 2.0W (Note2) z High performance Trench process z DFN3x3-8L Package z Pb-Free Applications z Battery charging z Load Switch z Power Switch z DC-DC converter Pin Conne

WPM2009D-WillSEMI.pdf