SFTN3568 - N-Channel MOSFET
SFTN3568 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current VDS 500 V VGS ± 30 V ID 12 A t = 1 ms IDM 48 A Power Dissipation Ptot 40 W Single Pulse Avalanche energy 1) Storage Temperature Operating Junction Temperature 1) VDD = 90 V, Tch = 25°C(initial), L = 4.3 mH, IAR = 12 A, RG = 25 Ω.
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