WFJ5N65B - Silicon N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topo

Features

4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V.
Ultra-low Gate charge(Typical13.3nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) WFJ5N65B Silicon N-Channel MOSFET General.

Winsemi

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Datasheet Details

Part number	WFJ5N65B
Manufacturer	Winsemi
File Size	665.70 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFJ5N65B Datasheet
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Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFJ5N65B Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.

Published: Mar 22, 2017 |