WFJ8N65B Datasheet, Mosfet, Winsemi

WFJ8N65B Features

• Mosfet � 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Tem

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Part number:

WFJ8N65B

Manufacturer:

Winsemi

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387.99kb

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📄 Datasheet

Description:

Power mosfet. This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this latest technology has been especially de

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WFJ8N65B

Winsemi

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