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WFJ8N65B Power MOSFET

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Description

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This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology.

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Datasheet Specifications

Part number
WFJ8N65B
Manufacturer
Winsemi
File Size
387.99 KB
Datasheet
WFJ8N65B-Winsemi.pdf
Description
Power MOSFET

Features

* 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V
* Ultra-low Gate charge(Typical 25nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Isolation Voltage (VISO=4000V AC)

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