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WFJ8N65B

Power MOSFET

WFJ8N65B Features

* 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V

* Ultra-low Gate charge(Typical 25nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Isolation Voltage (VISO=4000V AC)

* Maximum Junction Temperature Range(150℃) WFJ8N65B Silicon N-Channel MOSFET General Description This Power MOS

WFJ8N65B General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this latest technology has been especially designed to mi nimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant t.

WFJ8N65B Datasheet (387.99 KB)

Preview of WFJ8N65B PDF

Datasheet Details

Part number:

WFJ8N65B

Manufacturer:

Winsemi

File Size:

387.99 KB

Description:

Power mosfet.

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TAGS

WFJ8N65B Power MOSFET Winsemi

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