WFN1N60 Datasheet, Mosfet, Winsemi

WFN1N60 Features

• Mosfet � � � � � 1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Descr

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WFN1N60

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Winsemi

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📄 Datasheet

Description:

Silicon n-channel mosfet. Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology. This latest technology has been especiall

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WFN1N60

Winsemi

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