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WFN1N60N

Silicon N-Channel MOSFET

WFN1N60N Features

* 0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V

* Ultra-low Gate Charge(Typical 6.1nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS techno

WFN1N60N General Description

Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode powe.

WFN1N60N Datasheet (735.31 KB)

Preview of WFN1N60N PDF

Datasheet Details

Part number:

WFN1N60N

Manufacturer:

Winsemi

File Size:

735.31 KB

Description:

Silicon n-channel mosfet.

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WFN1N60N Silicon N-Channel MOSFET Winsemi

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