Datasheet4U.com

WFN1N60 - N-Channel MOSFET

Wisdom technologies

📥 Download Datasheet

WFN1N60 Datasheet Preview — Preview of WFN1N60 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	WFN1N60
Manufacturer	Wisdom technologies
File Size	886.73 KB
Description	N-Channel MOSFET
Datasheet	WFN1N60-Wisdomtechnologies.pdf

WFN1N60 Product details

Features

Low Intrinsic Capacitances .
Excellent Switching Characteristics .
Extended Safe Operating Area .
Unrivalled Gate Charge :Qg= 10nC (Typ. ).
BVDSS=600V,ID=1A.
RDS(on) : 8 Ω (Max) @VG=10V.
100% Avalanche Tested D ! G!.
◀▲.
! S TO-92 G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -co.

📁 WFN1N60 Similar Datasheet

WFN1N60C - Power MOSFET (Winsemi)
WFN1N60N - Silicon N-Channel MOSFET (Winsemi)
WFN1N60NC - Silicon N-Channel MOSFET (Winsemi)

Other Datasheets by Wisdom technologies

WFN1N70 - N-Channel MOSFET

Published: Apr 12, 2017 |