WFP13N50
Features
- 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
- Ultra-low Gate charge(Typical 43n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances pared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)...
