WFP13N50 Datasheet - Winsemi

WFP13N50, Silicon N-Channel MOSFET

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This Power MOSFET is produced using Winsemi’s trench layout-based process.

Features

* 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
* Ultra-low Gate charge(Typical 43nC)
* Fast Switching Capability
* 100%Avalanche Tested

Applications

* in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Dra

WFP13N50-Winsemi.pdf