C3D10065I - 10A Silicon Carbide Schottky
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various applica
C3D10065I Features
* Applications
* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
* Zero Reverse Recovery Current / Forward Recovery Voltage
* Temperature-Independent Switching Behavior
* Electrically Isolated Package (2.5kV)
* Industrial Switched Mode Pow
