C3D10060A
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Silicon carbide schottky diode.
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C3D10060A - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C3D10060A
3rd Generation 600 V, 10 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky B.
C3D10060G - Silicon Carbide Schottky Diode
(Cree)
C3D10060G
®
Silicon Carbide Schottky Diode
VRRM = Qc =
600 V
Z-Rec Rectifier
Features
IF (TC=135˚C) = 14 A 25 nC
Package
• • •.
C3D10060G - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C3D10060G
600 V, 10 A Silicon Carbide Schottky Diode
Features
• 600-Volt Schottky rectifier • Zero reverse recovery current • Zero forward recovery v.
C3D10065A - Silicon Carbide Schottky Diode
(Cree)
.DataSheet.co.kr
C3D10065A–Silicon Carbide Schottky Diode
Z-Rec™ Rectifier
Features
VRRM = 650 V IF(AVG) = 10 A Qc = 25 nC
Package
• • .
C3D10065A - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C3D10065A
3rd Generation 650 V, 10 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky B.
C3D10065E - Silicon Carbide Schottky Diode
(CREE)
C3D10065E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
VRRM = IF (TC=135˚C) = Qc =
650 V 15 A 24 nC
Features • 650-Volt Schottky Rec.
C3D10065E - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C3D10065E
650 V, 10 A Silicon Carbide Schottky Diode
Features
• 650-Volt Schottky rectifier • Zero reverse recovery current • Zero forward recovery vo.
C3D10065I - Silicon Carbide Schottky Diode
(Cree)
C3D10065I
Silicon Carbide Schottky Diode
VRRM =
650 V
Z-Rec™ Rectifier
Features Package
IF (TC=125˚C) = 10 A Qc = 25 nC
• • .
C3D10065I - 10A Silicon Carbide Schottky
(Wolfspeed)
C3D10065I
3rd Generation 650 V, 10 A Silicon Carbide Schottky
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier.
C3D10170H - Silicon Carbide Schottky Diode
(Cree)
.DataSheet.co.kr
C3D10170H–Silicon Carbide Schottky Diode
Z-Rec™ Rectifier
Features
VRRM = IF;
TC<135˚C
1700 V = 14.4 A 96 nC
Qc
=
Pa.