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ST Microelectronics
STPSC1206 - 600V power Schottky silicon carbide diode
www.DataSheet4U.com STPSC1206 600 V power Schottky silicon carbide diode Features ■ ■ ■ No reverse recovery Switching behavior independent of temper.
Wolfspeed
C2D10120D - 10A Silicon Carbide Schottky Diode
C2D10120D 1200 V, 10 A Silicon Carbide Schottky Diode Features • 1.2 kV Schottky rectifier • Zero reverse recovery current • Zero forward recovery vo.
Cree
CMF10120D - Silicon Carbide Power MOSFET
CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enhancement Mode RDS(on).
Wolfspeed
C3M0015065D - Silicon Carbide Power MOSFET
C3M0015065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blo.
CREE
C3D16065D - Silicon Carbide Schottky Diode
C3D16065D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = IF (TC=135˚C) = Qc = 650 V 22 A** 40 nC** • 650-Volt.
Cree
C3D16065A - Silicon Carbide Schottky Diode
C3D16065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = 650 V IF (TC=135˚C) = 18 A Qc = 44.5 nC • 6.
NXP
NXPSC06650 - Silicon Carbide Diode
TO-220AC NXPSC06650 Silicon Carbide Diode 4 May 2015 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC.
Cree
C3M0065090D - Silicon Carbide Power MOSFET
VDS 900 V C3M0065090D ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .
Microsemi
0150SC-1250M - Silicon Carbide SIT
0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The .
Wolfspeed
E3M0016120K - Silicon Carbide Power MOSFET
E3M0016120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno.
Wolfspeed
E3M0021120J2 - Silicon Carbide Power MOSFET
E3M0021120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techn.
Wolfspeed
C3D08060A - 8A Silicon Carbide Schottky
C3D08060A 3rd Generation 600V, 8 A Silicon Carbide Schottky Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier d.
Wolfspeed
C3D08060G - 8A Silicon Carbide Schottky Diode
C3D08060G 600 V, 8 A Silicon Carbide Schottky Diode Features • 600-Volt Schottky rectifier • Zero reverse recovery current • Zero forward recovery vol.
Wolfspeed
C3D16065D1 - 16A Silicon Carbide Schottky Diode
C3D16065D1 3rd Generation 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B.
GeneSiC
GD50MPS12H - Silicon Carbide Schottky Diode
GD50MPS12H 1200V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Meri.
GeneSiC
GC50MPS33H - Silicon Carbide Schottky Diode
GC50MPS33H TM 3300V 40A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode VRRM = IF (TC = 152°C) = QC = 3300 V 40 A 429 nC Features Pa.
Wolfspeed
E3M0120090J - Silicon Carbide Power MOSFET
E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation of SiC MOSFET technology • High bloc.
Wolfspeed
CPW6-1700-Z010A - Gen 6 Silicon Carbide Schottky Diode
CPW6-1700-Z010A Gen 6 Silicon Carbide Schottky Diode Description This is the 6th generation of high voltage, high performace Z-Rec© silicon carbide Sc.
Wolfspeed
WAS175M12BM3 - Silicon Carbide Half-Bridge Module
WAS175M12BM3 5 1200 V, 175 A, Silicon Carbide, Half-Bridge Module VDS IDS4 1200 V 3 175 A 2 D Technical Features • Industry Standard 62 mm F.
Wolfspeed
C6D08065G - 8A Silicon Carbide Schottky Diode
C6D08065G 6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Bar.
