Carbide Datasheet | Specifications & PDF Download

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L NVHL080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) =

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FFSP0665A — Silicon Carbide Schottky Diode www.onsemi.com FFSP0665A Silicon Carbide Schottky Diode 650 V, 6 A Features • Max Junction Temperature 17

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STPSC1006 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ P

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VDS 1200 V CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 17.7 A RDS(on) 160 mΩ N-Channel Enhan

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STPSC6H065DLF Datasheet 650 V power Schottky silicon carbide diode Product status link STPSC6H065DLF Product summary Symbol Value IF(AV) 6A VRR

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Silicon Carbide Schottky Diode 650 V, 10 A FFSB1065B-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provi

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L NDSH25170A 1. Cathode 2. Anode Schottky Diode

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IMW120R350M1H IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-

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IMW120R090M1H IMW120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-

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0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

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WNSC2D051200D Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPAK)

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VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode

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C3M0025065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High blo

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SCT015W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package Features Order code SCT015W

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WMSC010H12B1P N-Channel Silicon Carbide MOSFET Module Rev.02 - 5 February 2024 Product data sheet 1. General description WeEnPACK-B1 module with WeE

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C4D02120A 4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C3D20065D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero

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Silicon Carbide Thyristor Features • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT

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FFSP15120A — Silicon Carbide Schottky Diode FFSP15120A Silicon Carbide Schottky Diode 1200 V, 15 A Features • Max Junction Temperature 175 °C • Avala

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1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Zero rev

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