Carbide Datasheet | Specifications & PDF Download

0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

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G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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WNSC2D021200MB Silicon Carbide Diode Rev.01 - 16 August 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a SMB plast

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SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen

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IMWH170R450M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V at

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G3R40MT12D 1200 V 40 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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C3M0021120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High bl

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650V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆650V Schottky rectifier ◆Zero reverse recovery current/voltage ◆High frequency operation ◆Swi

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ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D20120D Silicon Carbide Schottky Barrier Diode Features Applications  1200-Vol t Schottky Re

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MSC020SDA120B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line

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SCT025W120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package Features Order code SCT025W120G3

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WNSC2M12120R N-Channel Silicon Carbide MOSFET Rev.01 - 24 November 2023 Product data sheet 1. General description Silicon Carbide MOSFET in a TO247-

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SCT040H120G3-7 Datasheet Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou

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G2R120MT33-CAL 3300 V 120 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G2R™ Technology with +20 V Gate Drive • Superior

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1200V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆1200V Schottky rectifier ◆Zero Forward/Reverse Recovery Current ◆High Blocking Voltage ◆High

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C4D30120H 4th Generation 1200 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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WNSC2D201200CW Silicon Carbide Diode Rev.02 - 13 June 2024 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a 3-lea

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WNSC2D051200D Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPAK)

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WNSC5D08650D Silicon Carbide Diode Rev.01 - 10 October 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPA

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