Carbide Datasheet | Specifications & PDF Download

G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

(229 views)

0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

(149 views)

ESIC04065S Silicon carbide power schottky diode TO-220AC Features ‧Rated to 650V at 4 Amps ‧Zero reverse recovery current ‧Zero forward recovery vol

(101 views)

ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D50065H Silicon Carbide Schottky Barrier Diode Features Applications VRRM=650V IF(TC=135℃ )=5

(100 views)

650V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆650V Schottky rectifier ◆Zero reverse recovery current/voltage ◆High frequency operation ◆Swi

(91 views)

UNISONIC TECHNOLOGIES CO., LTD USC120R040B 57A, 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET  DESCRIPTION SiC The material can ach

(90 views)

(90 views)

1200V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆1200V Schottky rectifier ◆Zero Forward/Reverse Recovery Current ◆High Blocking Voltage ◆High

(88 views)

ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D20120D Silicon Carbide Schottky Barrier Diode Features Applications  1200-Vol t Schottky Re

(84 views)

HMM60N120T Silicon Carbide Power MOSFET N-channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • High Speed Switching wit

(82 views)

• • • • • • • • • • (SMPS)，(PFC) • / • • ， • ， G5S12020U VRRM IF (TC = 148°C) Qc 1200V 20A 103nC TO-263 G = GPT 5 = S = 120 =

(79 views)

MSP10065V1 MSP10065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

(56 views)

PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Pos

(55 views)

NXPSC06650D Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode designed for high frequenc

(50 views)

NXPSC04650 Silicon Carbide Diode 8 October 2018 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plas

(48 views)

MSC010SDA070B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line

(48 views)

MSC010SDA170B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line

(47 views)

MSF10065V1 MSF10065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Fr

(46 views)

MSC010SDA070K Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line

(46 views)

VDS 1200 V CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 31.6 A RDS(on) 80 mΩ N-Channel Enhanc

(45 views)