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Carbide

Carbide DataSheet

Cree

C4D02120A - Silicon Carbide Schottky Diode

 · 15 Hits Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely F...
STMicroelectronics

SCT027H65G3AG - Automotive-grade silicon carbide Power MOSFET

 · 15 Hits Order code SCT027H65G3AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High spe...
STMicroelectronics

SCT020HU120G3AG - Automotive-grade silicon carbide Power MOSFET

 · 15 Hits Order code SCT020HU120G3AG VDS 1200 V RDS(on) typ. 18.5 mΩ ID 100 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • Hi...
Cree

CAS325M12HM2 - All-Silicon Carbide High-Performance Half-Bridge Module

 · 14 Hits • Ultra-Low Loss, Low (5 nH) Inductance • Ultra-Fast Switching Operation • Zero Reverse Recovery Current from Diode • Zero Turn-Off Tail Curre...
Microsemi

UPSC600 - Silicon Carbide Schottky Rectifiers

 · 14 Hits include a full rectifiers offer the power handling capabilities previously found only in metallic bottom that eliminates the possibility of solder f...
STMicroelectronics

SCT040TO65G3 - Silicon carbide Power MOSFET

 · 13 Hits TO-LL Order code VDS RDS(on) typ. ID SCT040TO65G3 650 V 40 mΩ 35 A • Very fast and robust intrinsic body diode • Very low RDS(on) over the...
Infineon

IMBG120R017M2H - Silicon Carbide MOSFET

 · 13 Hits • VDSS = 1200 V at Tvj = 25°C • IDDC = 76 A at TC = 100°C • RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload opera...
Cree

C3M0045065K - Silicon Carbide Power MOSFET

 · 12 Hits Package • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • H...
WeEn

WNSC2M45065R - N-Channel Silicon Carbide MOSFET

 · 12 Hits and benefits Lead-Free • Separate driver source pin • Low on-resistance • Fast switching speed • 0V turn-off gate voltage for simple gate drive • 10...
JILIN SINO

MG120R080 - N-CHANNEL Enhancement Silicon Carbide MOSFET

 · 12 Hits ⚫High Blocking Voltage ⚫Low On-Resistance ⚫High Speed Switching with Low Capacitances ⚫Easy to Parallel and Simple to Drive ⚫Avalanche Ruggedness ⚫RoH...
JILIN SINO

MG120R040 - N-CHANNEL Enhancement Silicon Carbide MOSFET

 · 12 Hits ...
Cree

C3D08065I - Silicon Carbide Schottky Diode

 · 11 Hits Package IF (TC=125˚C) = 8 A Qc = 21 nC • • • • • • 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Revers...
Wolfspeed

CAB530M12BM3 - All-Silicon Carbide Half-Bridge Module

 · 11 Hits Package 61.4 mm X 106.4 mm X 30 mm • Industry Standard 62mm Footprint • Ultra Low Loss, High-Frequency Operation • Zero Turn-off Tail Current from M...
STMicroelectronics

SCTW60N120G2AG - Automotive-grade silicon carbide Power MOSFET

 · 11 Hits Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 • AEC-Q101 qualified • High speed switching per...
STMicroelectronics

SCT027W65G3-4AG - Automotive-grade silicon carbide Power MOSFET

 · 11 Hits Order code SCT027W65G3-4AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very low RDS(on) over th...
Cree

CAS300M17BM2 - All-Silicon Carbide Half-Bridge Module

 · 10 Hits • Ultra Low Loss • High-Frequency Operation • Zero Reverse Recovery Current from Diode • Zero Turn-off Tail Current from MOSFET • Normally-off, F...
Cree

C2M0045170P - Silicon Carbide Power MOSFET

 · 10 Hits Package • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High Blocking Voltage with Low ...
Cree

C2M0080120D - Silicon Carbide Power MOSFET

 · 10 Hits Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanc...
CREE

C3M0060065K - Silicon Carbide Power MOSFET

 · 10 Hits Package 650 V 37 A 60 mΩ • 3rd Generation SiC MOSFET technology TAB Drain • High blocking voltage with low on-resistance • High speed switching ...
Wolfspeed

C3M0060065L - Silicon Carbide Power MOSFET

 · 10 Hits rrent, Pulse width tP limited by Tjmax PD Power Dissipation, TC=25˚C, TJ = 175 ˚C TJ Junction Temperature TC , Tstg Case Temperature and Storage ...
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