Part STPSC10H12-Y
Description Automotive grade 1200V power Schottky silicon carbide diode
Category Diode
Manufacturer STMicroelectronics
Size 528.23 KB
STMicroelectronics
STPSC10H12-Y

Overview

The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.

  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK®2 compliant