Datasheet Details
| Part number | STPSC10H12-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 528.23 KB |
| Description | Automotive grade 1200V power Schottky silicon carbide diode |
| Datasheet | STPSC10H12-Y-STMicroelectronics.pdf |
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Overview: STPSC10H12-Y Automotive grade 1200 V power Schottky silicon carbide diode Datasheet - production data A K K K A K TO-220AC A.
| Part number | STPSC10H12-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 528.23 KB |
| Description | Automotive grade 1200V power Schottky silicon carbide diode |
| Datasheet | STPSC10H12-Y-STMicroelectronics.pdf |
|
|
|
The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
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