Datasheet Summary
Automotive grade 1200 V power Schottky silicon carbide diode
- production data
A K TO-220AC
A NC
D²PAK
Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- ECOPACK®2 pliant
Description
The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at...