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STPSC10H12G2Y-TR - silicon carbide power Schottky diode

General Description

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.

Key Features

  • AEC-Q101 qualified.
  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high voltage periphery.
  • PPAP capable.
  • Operating Tj from -40 °C to 175 °C.
  • Low VF.
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK2 compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC10H12G2Y-TR Datasheet Automotive 1200 V, 10 A, silicon carbide power Schottky diode A1 K K A A NC D²PAK HV Product label Product status link STPSC10H12G2Y-TR Product summary IF(AV) 10 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • Low VF • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant Applications • On board charger (OBC) • DC/DC • PFC Description This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate.