Datasheet Summary
Automotive 1200 V, 10 A, silicon carbide power Schottky diode
A1
D²PAK HV
Product label
Product status link STPSC10H12G2Y-TR
Product summary
IF(AV)
10 A
VRRM
1200 V
Tj (max.)
175 °C
VF (typ.)
1.35 V
Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- Low VF
- D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
- ECOPACK2 pliant
Applications
- On board charger (OBC)
- DC/DC
- PFC
Description
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is...